Domain-b3 天
DRDO lab develops silicone carbide wafers, gallium nitride transistors for MMICs
Solid State Physics Laboratory (SSPL), a research arm of the Defence Research and Development Organisation (DRDO), has ...
Indigenous development of silicon carbide wafers, GaN HEMT
Visakhapatnam: Solid State Physics Laboratory (SSPL), a DRDO laboratory successfully developed indigenous processes for ...
devdiscourse3 天
DRDO's Solid State Physics Laboratory Develops Indigenous 4-Inch Silicon Carbide Wafers and ...
wafers. Additionally, SSPL has advanced capabilities in fabricating Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) with power ratings up to 150W and Monolithic Microwave Integrated ...
electronics360.globalspec9 天
Infineon advances 300 mm GaN power wafer technology
Infineon Technologies AG has progressed in its development of what it claims is the first 300 mm gallium nitride (GaN) power ...
Semiconductor Engineering3 天
Silicon Carbide And Gallium Nitride Bring New Challenges For Semiconductor Test
By contrast, silicon wafers are pristine and defect-free single-crystal substrates (source ... systems tailored to the unique ...
Shenzhen unveils centre for third-generation semiconductors amid self-sufficiency drive
The Shenzhen platform is part of the National Third-Generation Semiconductor Technology Innovation Centre, first launched in ...
EPT11 天
Infineon unveils super thin silicon power wafer
After announcing the world’s first 300-millimeter gallium nitride (GaN) power wafer and opening the world’s largest ...
inc4214 天
Can AGNIT’s GaN Wafers Become India’s Edge In The Global Chip Market?
global semiconductor giant Infineon Technologies pioneered the development of the world’s first 300 mm power gallium nitride (GaN) wafer technology. While GaN semiconductors have been in use ...
Electronic Design4 小时
Ultra-Thin Silicon Wafers Wring More from Power Electronics
According to Infineon, these wafers—the thinnest of its type to be mass-produced—will enhance the efficiency, density, and ...