wafers. Additionally, SSPL has advanced capabilities in fabricating Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) with power ratings up to 150W and Monolithic Microwave Integrated ...
Solid State Physics Laboratory a DRDO laboratory has successfully developed indigenous processes for growing and manufacturing 4-inch diameter Silicon Carbide ...
wafers and fabricating Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) upto 150W and Monolithic Microwave Integrated Circuits (MMICs) up to 40W for applications up to X-band ...