According to Infineon, these wafers—the thinnest of its type to be mass-produced—will enhance the efficiency, density, and ...

By contrast, silicon wafers are pristine and defect-free single-crystal substrates (source ... systems tailored to the unique ...

Infineon Technologies AG has progressed in its development of what it claims is the first 300 mm gallium nitride (GaN) power ...

Solid State Physics Laboratory (SSPL), a research arm of the Defence Research and Development Organisation (DRDO), has ...

After announcing the world’s first 300-millimeter gallium nitride (GaN) power wafer and opening the world’s largest ...

Infineon has unveiled the world’s thinnest silicon power wafers, with a thickness of 20 micrometers and a diameter of 300 ...

Shenzhen will unveil a national innovation centre for so-called third-generation semiconductors at the city's annual hi-tech ...

Visakhapatnam: Solid State Physics Laboratory (SSPL), a DRDO laboratory successfully developed indigenous processes for ...

global semiconductor giant Infineon Technologies pioneered the development of the world’s first 300 mm power gallium nitride (GaN) wafer technology. While GaN semiconductors have been in use ...

Solid State Physics Laboratory, a DRDO laboratory, has successfully developed indigenous processes for growing and ...